| Over View and Application DE500 Magnetron Sputter with sputtering chamber of four sputter sources and one sample stage for loading the substrate up to 6” diameter, the sputter chamber base vacuum pressure is10-8 Torr, it can be used to sputter metals, semiconductor or insulation materials, it also can sputter alloy film or multi layer film, especially it can be used to sputter very thin film for some typical materials base on the very low sputter pressure, this is the ideal tools for thin film R&D for the university and academy. 概述和應用 DE500磁控濺射儀主要包括濺射腔體，4個濺射源和一個樣品臺可裝載并濺射zui大六英寸樣品，系統(tǒng)極限真空度10-8托，可用于 濺射金屬、半導體及介質材料，可用于濺射合金及多層薄膜材料，特別的是可以維持很低的濺射氣壓因此可以濺射非常薄的膜層， 是大專院校和科研院所從事材料和薄膜研究的理想平臺 Features: 特點： Good Film Uniformity and repeatability 很好的薄膜均勻性和重復性 Safety interlock for critical components 關鍵部件安全互鎖保護 Configuration 主要配置 | Magnetron Sputter Chamber 濺射真空腔室 | D shape, 304 stainless steel chamber with viewport 磁控濺射腔體為304不銹鋼，并有觀察窗 | | Vacuum Pumping 真空泵 | Turbo pump and dry rough pump with sputter chamber 濺射室配備分子泵和無油機械泵 | | Vacuum Valve 真空閥門 | Pneumatic operation high vacuum and isolation gate valves 氣動控制高真空和隔離插板閥門 Chamber Vent Valve, Rough and Foreline angle valve, and gas valve 腔體充氣閥門，粗抽和前級角閥，氣體截止閥 | | Sputtering Sources 濺射源 | Four 4” circle magnetron sputtering sources 4個4英寸圓形磁控濺射源 Each source with Pneumatic shutter 每個源配備手動擋板 The power supply can be DC, pulse DC or RF power supply 電源可以配備直流，脈沖直流或射頻電源 | | Sample Stage 樣品臺 | Substrate linear motion, rotating, and the sample heating or water cooling, Up to 6” substrate with Pneumatic substrate shutte 樣品臺直線升降和旋轉，樣品可加熱或冷卻，zui大6英寸基片裝載能力，配氣動樣品擋板 | | Vacuum Gauging 真空測量 | Wide range vacuum gauge and Pirani rough gauge 寬量程真空計用于測量真空和皮拉尼粗抽計 | | Pressure Control 壓力控制 | Three Mass flow controller 三路流量計 Capacitance manometer for sputter process pressure control 一個壓力計實現(xiàn)濺射壓力控制 | | Cooled Water Interlock 冷水安全互鎖 | There are cooled water flow sensors of interlock to protect sputter sources work properly 濺射源冷卻水路配水流傳感器對濺射源安全互鎖保護 | | Load Lock | Option O2 reactive, RF plasma cleaning, single or multi substrate loading 可選, 通氧反應，射頻等離子體清洗, 單基片或多基片裝載能力 | Specification 主要技術指標 | Sputter Chamber Size 磁控濺射腔體尺寸 | 450mm wide x 430mm deep x 450mm high 450mm寬430mm深450mm高 | | The Base Vacuum Pressure in Sputter Chamber 濺射腔體極限真空度 | better than 5E-8 Torr 優(yōu)于5E-8托 | | Sample Loading Capacity 裝樣能力 | Max. 6 inch flat substrate zui大6英寸的平板基片 | | The Max. Temperature of the Sample Heater 樣品加熱器zui高溫度 | 1000C 1000度 | | The film uniformity 膜厚均勻性 | better than +/-3% over a rotating 4 inch Silicon wafer 在旋轉的4英寸硅基片上的膜厚均勻性由于+/-3% | | General Sputtering Pressure 通用濺射壓力 | 1-5 mTorr 1至5毫托 | |
