簡(jiǎn)述:
利用石墨烯固有的低噪聲特性，無(wú)需信號(hào)調(diào)節(jié)即可提供出色的場(chǎng)分辨率。石墨烯的二維性質(zhì) 很大程度地降低了平面霍爾效應(yīng)，并且石墨烯的穩(wěn)定性和電子 遷移率提供了 的溫度和磁場(chǎng)工作范圍。
應(yīng)用包括：
• 精密磁場(chǎng)測(cè)量
• 場(chǎng)梯度和邊緣場(chǎng)的精確映射
• 高精度位置，旋轉(zhuǎn)和速度感應(yīng)
• 低溫下的超低功率場(chǎng)測(cè)量
優(yōu)點(diǎn):
可滿足各種應(yīng)用需求?？梢岳玫膬?yōu)點(diǎn)包括：
• 可以在 < 1.8 K - 353 K的溫度下運(yùn)行
• 在大磁場(chǎng)范圍(> 9 T)內(nèi)ppb磁場(chǎng)變化的分辨率
• 低至 10 nA的工作電流，節(jié)省了功率，僅產(chǎn)生5 pW的散熱
• 平面霍爾效應(yīng)可忽略不計(jì)，有助于精確地確定儀器的擺放位置場(chǎng)方向
需要特定要求，請(qǐng)聯(lián)系我們info<info>
性能特點(diǎn):
| Parameter | Symbol | Value (typical) | Unit | Notes |
| Maximum operating temperature range | T | 1.8 to 353 | K | Performance guaranteed within this range. Operation <1.8 K is possible |
| Measurable field range | B | >+/- 9 | T | See Fig.2. At 1.8K, 0-9 T is possible with reduced linearity |
| Open Circuit Sensitivity | S | 1100 | V/AT | @ room temperature. see Fig 3 for change with temperature |
| Open Circuit Hall Voltage | VH | 110 | mV | I=IN ａnd B=1 T, increases with reducing temperature |
| Spectral Noise Density | SDT | 7 | µ??⁄√???? | 10 Hz, 2 VRMS (equivalent to I=IN) |
| 0.7 | 1 kHz, 2 VRMS (equivalent to I=IN) |
| 0.3 | 10 kHz, 2 VRMS (equivalent to I=IN) |
| 0.07 | 100 kHz, 2 VRMS (equivalent to I=IN) |
| Resolution, based on SDT on a 1 T field | RSND | 7 | ppm | 10 Hz, 2 VRMS (equivalent to I=IN) |
| 0.7 | 1 kHz, 2 VRMS (equivalent to I=IN) |
| 0.3 | 10 kHz, 2 VRMS (equivalent to I=IN) |
| 0.07 | 100 kHz, 2 VRMS (equivalent to I=IN) |
| RMS noise | ??T2? | 40 | ?T | 0.1 – 10 Hz, 2 VRMS (equivalent to I=IN) |
| 28 | 10 – 100 kHz, 2 VRMS (equivalent to I=IN) |
| Linearity of Hall Voltage % of full scale | FL | <0.5 | % | -1 to 1 T. See Fig 2 for full 0-9 T range |
| Corrected Linearity | | <0.01 | % | -1 to 1 T, after 3rd order correction |
| Planar Hall Effect | HPL | <10 | µT | At I=IN , 1 T |
| Nominal Supply Current | IN | 0.1 | mA | Can be operated down to I=10 nA |
| Maximum Supply Current | Imax | 1 | mA | |
| Supply Side Internal Resistance | RIN | 22 | k? | B=0 T |
| Hall Side Internal Resistance | ROUT | 22 | k? | B=0 T |
| Offset Voltage | VR0 | 8 | mV | Typical offset voltage at I=IN ａnd B=0 T |
| 0.6 | mV | Min offset voltage at I=IN ａnd B=0 T |
| 34 | mV | Max offset voltage at I=IN ａnd B=0 T |
| Temperature Coefficient of Sensitivity | TCS | -4.7 | V/AT/K | @ room temperature, IN |
高場(chǎng)和低溫性能
Figure 2. Hall Voltage output at 295 K, from 0 to 9 T
Figure 3. Sensitivity as a function of temperature from 1.8 K to 300 K. Measured at 1T.
封裝信息
有效面積：1.3 x 1.3 mm 位于封裝的中心封裝類型: 20-pin LCC, 陶瓷,無(wú)鎳, 表面貼焊。
| | Pin | Notes |
| VIN+ | 1 or 11 | Input voltage can be supplied with either polarity |
| VIN- | 11 or 1 |
| VH+ | 6 or 16 | Hall voltage polarity will depend on VIN polarity ａnd field polarity |
| VH- | 16 or 6 |
