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公司名稱 上海巨納科技有限公司
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更新時(shí)間 2020/12/27 0:27:10
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促銷詳情

促銷時(shí)間：

特價(jià)說(shuō)明：

促銷詳細(xì)：

2020年01月08日至 2020年02月08日

特價(jià)促銷

模內(nèi)澆口分離自動(dòng)化，降低對(duì)人的依賴度；傳統(tǒng)的塑膠模具開(kāi)模后產(chǎn)品與澆口相連，需二道工序進(jìn)行人工剪切分離，模內(nèi)熱切模具將澆口分離提前至開(kāi)模前，消除后續(xù)工序，有利于生產(chǎn)自動(dòng)化，降低對(duì)人的依賴。

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GeP has highly anisotropic dispersions of bａnd structures, with a layer-dependent indirect bａnd gap from （theoretically predicted） 1.68 eV of monolayer to 0.51 eV of bulk.

詳細(xì)信息在線詢價(jià)

GeP has highly anisotropic dispersions of bａnd structures, with a layer-dependent indirect bａnd gap from (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk. GeP is an anisotropic semiconductor much similar to GaTe monoclinic structure. Our single crystal GeP (Germanium phosphide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. Please also see our GeS, GeSe, GeTe, GeAs, GeP, and Ge-based solutions.

Characteristics of vdW GeP crystals