硒化鉍晶體 Bi2Se3（Bismuth Selenide）晶體尺寸：10毫米電學性能：拓撲絕緣體晶體結構：菱面體晶胞參數(shù)：a = b = 0.413, c = 2.856 nm, α = β = 90#176;, γ = 120#176;晶體類型：合成晶體純度：＞99.995%

硒化鉍晶體 Bi2Se3(Bismuth Selenide)
晶體尺寸：10毫米
電學性能：拓撲絕緣體
晶體結構：菱面體
晶胞參數(shù)：a = b = 0.413, c = 2.856 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a Bi2Se3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 6 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24 

XRD of a single crystal Bi2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

EDX of a single crystal Bi2Se3.

Raman of a single crystal Bi2Se3. Measurement with a 785nm Raman at room temperature.