硒化鍺晶體 GeSe （Germanium Selenide）晶體尺寸：~10毫米電學性能：半導體晶體結構：斜方晶系晶胞參數(shù)：a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90#176;晶體類型：合成晶體純度：＞99.995%

硒化鍺晶體 GeSe (Germanium Selenide)
晶體尺寸：~10毫米
電學性能：半導體
晶體結構：斜方晶系
晶胞參數(shù)：a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a GeSe single crystal aligned along the (100) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal GeSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal GeSe by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GeSe. Measurement was performed with a 785 nm Raman system at room temperature.