晶體尺寸：8毫米電學(xué)性能：半導(dǎo)體晶體結(jié)構(gòu)：?jiǎn)涡绷拙О麉?shù)：a = 0.541nm，B = 0.375nm，C = 0.944nm，α=γ= 90#176;，γ= 97.50晶體類(lèi)型：合成晶體純度：＞99.995%表征方法：XRD、拉曼、EDX

晶體尺寸：8毫米
電學(xué)性能：半導(dǎo)體
晶體結(jié)構(gòu)：?jiǎn)涡绷?/span>
晶胞參數(shù)：a = 0.541nm，B = 0.375nm，C = 0.944nm，α=γ= 90°，γ= 97.50
晶體類(lèi)型：合成
晶體純度：＞99.995%
表征方法：XRD、拉曼、EDX
 

X-ray diffraction on a ZrSe3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 3, 4, 5, 6, 7, 8

Powder X-ray diffraction (XRD) of a single crystal ZrSe3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Raman spectrum of a single crystal ZrSe3. Measurement was performed with a 785 nm Raman system at room temperature.