二硫化鉭晶體（2H） TaS2（Tantalum Sulfide） -2H晶體尺寸：~10毫米電學性能：Metal, Charge density waves （CDW） system below ~75K, Superconductor with Tc ~1K 金屬、電荷密度波（CDW）晶體結(jié)構(gòu)：六邊形晶胞參數(shù)：a = b = 0.331 nm,

二硫化鉭晶體(2H) TaS2(Tantalum Sulfide) -2H
晶體尺寸：~10毫米
電學性能：Metal, Charge density waves (CDW) system below ~75K, Superconductor with Tc ~1K
                 金屬、電荷密度波(CDW)
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.331 nm, c = 1.207 nm, α = β = 90, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a 2H phase Tantalum Disulfide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal 2H-TaS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal 2H-TaS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal 2H-TaS2. Measurement was performed with a 785 nm Raman system at room temperature.