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公司名稱 上海巨納科技有限公司
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更新時(shí)間 2020/12/26 16:18:22
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促銷時(shí)間：

特價(jià)說(shuō)明：

促銷詳細(xì)：

2020年01月08日至 2020年02月08日

特價(jià)促銷

模內(nèi)澆口分離自動(dòng)化，降低對(duì)人的依賴度；傳統(tǒng)的塑膠模具開模后產(chǎn)品與澆口相連，需二道工序進(jìn)行人工剪切分離，模內(nèi)熱切模具將澆口分離提前至開模前，消除后續(xù)工序，有利于生產(chǎn)自動(dòng)化，降低對(duì)人的依賴。

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The only commercially available TlGaS2 vdW crystals have been synthesized at our facilities through float zone technique.

詳細(xì)信息在線詢價(jià)

The only commercially available TlGaS2 vdW crystals have been synthesized at our facilities through float zone technique. TlGaS2 semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, , TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. In particular, is a 2.45 eV direct gap semiconductor with strong optical and electronic anisotropy.

The only commercially available vdW crystals have been synthesized at our facilities through float zone technique. semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, , TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. In particular, is a 2.45 eV direct gap semiconductor with strong optical and electronic anisotropy.